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Description
In 4 Minutes, Grasp the Big Picture Scan 100 mm * 100 mm with 50 µm Resolution in Under 4 Minutes
The laser scanning defect imager is an upgraded version of the Laser Beam Induced Current (LBIC) test. It utilizes a laser beam with a wavelength energy greater than the semiconductor bandgap to irradiate the semiconductor, generating electron-hole pairs. By rapidly scanning the surface of the sample, it obtains an image distribution that reveals changes in internal current to analyze various defect distributions. This helps in analyzing the quality of sample preparation and aids in process improvement.
Features
- Scanning the distribution of photo-generated current
- Analyzing surface contamination
- Scanning the distribution of photovoltage
- Analyzing the distribution of short-circuit regions
- Scanning the distribution of open-circuit voltage and short-circuit current
- Identifying and analyzing microcrack regions
- Analyzing the distribution of minority carrier diffusion length (optional feature)
Specification
| Item | Parameter Description. |
|---|---|
| Function | a. Utilizing laser beams with wavelengths that have higher energy than the semiconductor bandgap to generate electron-hole pairs in the semiconductor, exploring the impact of the depletion region on internal current changes to understand and analyze various defect distributions as a direction for process improvement. b. Capable of scanning the distribution of photo-generated current on the surface of the sample. c. Capable of scanning the distribution of photo-voltage on the surface of the sample. d. Capable of analyzing surface contamination. e. Capable of analyzing the distribution of short-circuit regions. f. Capable of identifying and analyzing microcrack regions. g. Capable of analyzing the distribution of minority carrier diffusion length (optional). |
| Excitation source | 450 ±10nm Laser |
| Scan area | ≦100mm x 100mm |
| Laser spot size | Close to TEM00 mode spot |
| Mapping resolution | a. Scanning resolution ≤ 50 µm b. Scanning resolution can be set by software |
| Mapping time | <4 mins (For 100 mm x 100 mm with 50 um resolution) |
| Dimension | 60 cm * 60 cm * 100 cm |
| Software | a. LBIC 3D visualization b. 2D cross-sectional analysis (electrode aspect ratio) c. Photo-current response distribution analysis (in conjunction with long-wavelength laser source) d. Data saving and export functions |
System Design
Application
Sillicon Solar Cell Photocurrent Distribution(405nm)
6-inch Silicon Slar Cell Scan(17seconds)
LSD4-OPV Photoresponse Current Distribution Map
LSD4-OPV Photoresponse Current Distribution Map
Perovskite Solar Cell
Non-uniformity analysis with a resolution of 50 µm
Busbar/Grid Aspect Ratio Detection (Cross-sectional Analysis)
Aging Analysis of Perovskite Cells
Aging Analysis - Zoom in on a specific area to analyze the causes of aging in detail
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