Description
Description
Specification
Application
Key Performance
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Description
The Prober can handle max. 200mm wafer size and single die of size greater than 1cm x 1cm. SG-O integrates a ultra-low noise thermal chuck which can provide the temperature range from -60°C to 180 °C with rapid temperature ramping speed and stability.
SG-O provides all you need in CIS / ALS / Light-Sensor design validation or process-yield checking.
Features
Highly Uniform Light Source
- Wide Spectral Range from UV to SWIR.
- Highly Uniformity Better Than 98% Over 50mm x 50mm Area
- Ultra-stable light intensity, instability of < 0.2% over 10 hours
- High Light Intensity Dynamic Range, up to 140dB
Programable Automatic Prober
- 200mm~10mm wafer or die handling capability
- For Most Accurate and Reliable DC / CV, RF Measurements
- Stable and Functional Microscope System
- Integrated Hardware Control Panel
- Automated Wafer Loader
- Teaching-Learning Smart Wafer Mapping
Wide Temperature and Low Noise Chuck
- Modular Chucks
- Wide Range of Temperature from -80°C to 180°C
- Advanced CDA Thermal Control
- Technology, High Ramping Rate and High T Stability
- Ultra-Low Noise for Accurate CIS / ALS / Light-Senser Wafer Testing
Specification
SG-O provides complete specifications for all you need in CIS / ALS / Light-Sensor wafer testing. Below is the main components and their details. If you need more details please be free to contact us!
Highly Uniform Light Source
- Spectral Range: 400nm to 1700nm
- Color Contrast Temperature: 3000K to 5200K
- Area of Uniform Illumination: 42mm x 25mm at >200mm working distance>
- Uniformity of Illumination: better than 98%
- Short Term Light Instability: ≤ 1% over 1hr
- Long Term Light Instability: ≤ 1% over 10hr
- Working Distance between DUT and Last Optical Element: ≥ 200mm working distance
- Monochromatic Light Generation:
- Center-Wavelength with 10nm FWHM: 420nm, 450nm, 490nm, 510nm, 550nm, 570nm, 620nm, 670nm, 680nm, 710nm, 780nm, 870nm
- Center-wavelength with 25nm FWHM:1010nm、1250nm、1450nm
- Center-wavelength with 45±5nm FWHM: 815nm
- Center-wavelength with 50nm FWHM:1600nm
- Center-wavelength with 60±5nm FWHM: 650nm
- Center-wavelength with 70±5nm FWHM: 485nm, 555nm
- Center-wavelength with 100±5nm FWHM: 1600nm
- Out of Band Light Transmission ≤ 0.01%
- Peak Transmission in Band-Pass Region ≥ 80%
- Center-Wavelength Tolerance: (a) ≤ ±2nm; (b)~(g) ≤ ±5nm
- FWHM Tolerance: (a) ≤ ±2nm; (b)~(g) ≤ ±5nm
- Variable Attenuator: PC Controlled 3-decade resolution with at least 1000 steps
Semi-automated wafer probes
- Wafer size capability: 200mm, 150mm, 100mm wafers and single die of size greater than 1cm x 1cm
- Wafer Handling: Single wafer, manual feed type
- Semi-automation: One step manual align teach and automatic die stepping
- XYZ Stage
- Chuck XY Stage Travel: 210mm x 300mm
- Chuck XY Stage Resolution: better than 0.5um
- Chuck XY Stage Accuracy: better than 2.0um
- Chuck XY Stage Speed: Slowest: 10um/sec and Fastest: 50mm/sec
- Chuck Z Stage Travel: 50mm
- Chuck Z Stage Resolution: 0.2um
- Chuck Z Stage Accuracy: ±2.0um
- Theta Stage
- Theta Stage Travel: ±5 degree range of motion
- Theta Stage Resolution: better than 0.01 degree
- Theta Stage Accuracy: 0.1 degree
- Chuck
- Chuck Flatness ≤ 10um
- Chuck Thermal Operation: -60°C to 200°C
- Chuck Leakage at 25°C: ≤ 20fA per voltage under 10V bias at 25°C
- Chuck Residual Capacitance ≤ 95fF
- Probe Card
- Probe Card Dimension: 4.5 inch up to 8 inch long
- Clearance Space between Probe Card holder an Platen: ≥ 7.5mm
- Micro Chamber
- EMI Shielding: ≥ 30dB in the range of 1kHz to 1 MHz
- System AC Noise: ≤ 5 mVp-p
- Micro-positioners
- Microscope
- Vibration Isolation Table
Spectral irradiance meter
- Spectral Range: 400nm to 1600nm
- Wavelength Resolution: 400nm to 1000nm increased step < 1nm; 1000nm to 1600nm increased step < 3.5nm
- Calibration: NIST traceable calibration certificate
More Specifications
The SG-O integrates Enlitech’s Advanced Light Simulator Technologies and MPI automated probe system. Enlitech provides many optical options to fit user’s requirements for CIS / ALS / Light-Sensor wafer testing, including wavelength ranges, light intensity and uniform beam sizes. We have over decades of experience to help customers to solve the challenges of CIS / ALS / Light-Sensor wafer testing and design variation. Please be free to contact us for more details. Our professional team will assist you!
System Design

The SG-O CIS / ALS / Light-Sensor tester (wafer level) system diagram. Th Highly Uniform Light Source is controlled by PC-1. The light output is guided by the fiber to the Optical Homogenizer to generate the uniform light beam. The microscope and the homogenizer are controlled by a automatic translation stage by PC-1 to switch the positions and the functions. The Prober system is MPI TS2000 and controlled by PC-2. The position of chuck stage is also controlled by PC-2. The thermal chuck temperature can be controlled from -55℃ to 180℃ , which covers the most IC testing temperature range. The light intensity is detected and calibrated by one Si photodetector and one InGaAs photodetector through a pico-amp current meter.
Application
- CIS/ALS/Light-Sensor Wafer Testing;
- CIS/ALS/Light-Sensor Wafer Mapping and Yield Checking
- ToF Sensor Testing
- LiDAR Sensor Testing
- InGaAs PD testing
- SPAD sensor Testing
- Light-Sensor Analog Parameters Testing:
- Quantum Efficiency
- Spectral Response
- System Gain
- Sensitivity
- Dynamic Range
- Dark Current/ Noise
- SNR
- Saturation Capacity
- Linearity Error(LE)
- DCNU (Dark Current Non-Uniformity)
- PRNU (Photo Response Non-Uniformity)
Key Performarce

The operating software of the SG-O system. For the Highly Uniform Light Source controlling software, SG-O provides light source system control and light intensity measurement. The Labview functional palettes, driver / DLL files for individual optical components are provided. The softwares control the translation stage to facilitate illuminate large are devices in parts. The integration links include sending / receiving commands like start dies stepping, dies alignment / probing are already integrated and provided.

CIS / ALS / Light-Sensor wafer image from the microscope system of SG-O
Probe card installation image for CIS / ALS / Light-Sensor wafer.

SG-O-CIS-wafer-level-tester-24_-wafer-and-probe-card-contact-image
The Light Homogenizer of SG-O CIS wafer level tester.
Optical Simulation and Performance of the Light Homogenizer of SG-O CIS wafer level tester.
The light beam uniformity. The beam spot uniformity tested at 420nm with 42mm x 25mm. The non-uniformity is 1%
The light beam uniformity. The beam spot size is 50mm x 50mm. The non-uniformity is 1.43%.
The monochromatic light intensities at different wavelengths, which is from UV, to NIR. The light intensity is measured by the Si irradiance meter. The light intensity range is capable for all kinds of CIS / ALS / Light-Sensor testing.
The monochromatic light intensities at different wavelengths from NIR to SWIR. The light intensity is measured by the InGaAs irradiance meter.
The Highly Uniform Light Source of SG-O has a ultra-stable light engine. The light intensity instability for short- or long-term are both better than 0.2% over whole wavelength range.
The light intensity short term instability is tested at 420nm monochromatic light output. The light instability is monitored by the Si irradiance meter for 60mins. The instability is 0.12% for 1 hour.
The light intensity short term instability is tested at 1250nm monochromatic light output. The light instability is monitored by the SInGaAs irradiance meter for 60mins. The instability is 0.09% for 1 hour.
The light beam uniformity. The beam spot uniformity tested at 420nm with 42mm x 25mm. The non-uniformity is 1%.
The light intensity short term instability is tested at 420nm monochromatic light output. The light instability is monitored by the Si irradiance meter for 10hrs. The instability is 0.1% for 10hrs.

The light intensity attenuator of SG-O system. The light output intensity can be manipulated by PC at least 1000 steps resolution.

The Fact Sheet of the Automated Prober. SG-O CIS / ALS / Light-Sensor wafer tester integrates MPI probers. More details can be found in MPI’s website.
Source: MPI
Automated single wafer loader is build in the SG-O prober system. It is convenient for CIS / ALS / Light-Sensor wafer loading. Loading and unloading wafer is straight forward and intuitive for users. The temperature control panel is also integrated in the front of the loading chamber which is convenient for operations.
SG-O CIS / ALS / Light-Sensor wafer tester also has a manual loading function, which can manually load the wafer from the front door. This front door has the safety managing function, which can automatically monitor the chuck temperature and prevents opening the door during testing to keep CIS / ALS / Light-Sensor wafer and user safe.
The thermal chuck of SG-O CIS / ALS / Light-Sensor wafer tester is temperature controlled by a ERS’s minimized CDA system, which much more efficient than before. The temperature range can cover -80°C to 180°C (depends on ERA’a models). Nitrogen purging is possible by using separate valve. The targeting temperature ramping rate and stability are excellent for CIS / ALS / Light-Sensor wafer testing in any extra-ordinate conditions, such as space.

The probe card dimension capability can be from 4.5 inch tup to 8 inch long. The working distance between DUT and last optical element of Highly Uniform Light Source of SG-O is over 200mm as shown in the picture.

The probe card dimension capability can be from 4.5 inch tup to 8 inch long. The working distance between DUT and last optical element of Highly Uniform Light Source of SG-O is over 200mm as shown in the picture.
Resources
Data
Technique
CAD or Software
Manual
Contact Us
The Prober can handle max. 200mm wafer size and single die of size greater than 1cm x 1cm. SG-O integrates a ultra-low noise thermal chuck which can provide the temperature range from -60°C to 180 °C with rapid temperature ramping speed and stability.
SG-O provides all you need in CIS / ALS / Light-Sensor design validation or process-yield checking.


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