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Product Description: Advanced Optical Characterization Platform for High-Volume PIC Production and R&D
As AI compute demand continues its explosive growth, data centers are undergoing a fundamental transition from copper-based electrical interconnects to Optical Interconnects and Co-Packaged Optics (CPO). In this shift, accurately identifying KGD prior to packagingāand ensuring long-term device reliabilityāhas become the central challenge in yield and cost management. Enlitech’s Silicon Photonics Optical Characterization System is a professional-grade solution engineered precisely to address these challenges.Natively Integrated Platform: Intelligent Automation from Lab to Production Line
The system provides the silicon photonics industry with a natively integrated measurement platform combining high automation, long-term stability, and exceptional scalability. Built around Enlitech’s proprietary software architecture and intelligent control hub, the platform seamlessly unifies precision light source control, polarization management, and fully automated probe positioning. Through sub-micron automated optical coupling (supporting GC vertical coupling) and an intelligent First Light search algorithm, the system executes automated alignment optimizationābridging the gap between laboratory-scale development and production-line big-data analysis without workflow disruption.High-Power Reliability Option: PIC Long-Term Stability Validation and Wide-Temperature KGD Screening
Beyond standard precision analysis capabilities, the platform can be configured with a 1.2 W (30.8 dBm) ultra-high-power light source and full PoincarĆ© sphere polarization control for customers requiring high-reliability qualificationāsuch as PIC long-term stability validation and aging tests. The system maintains zero-drift performance across weeks of continuous operation via a closed-loop Power-feedback-lock mechanism. Whether performing parameter extraction in early-stage R&D, PCM structure testing at the WAT stage, or large-scale KGD screening on the production line, the system delivers precise, high-throughput, non-destructive results across a wide temperature range of -40°C to +125°C.Technical Specifications
1. Core Optoelectronic Measurement Metrics
The system features high dynamic range and high-resolution data acquisition, supporting comprehensive characterization of silicon photonics devices across multiple parameter categories.
Key Optical Loss Metrics
- Insertion Loss (IL): Real-time dynamic monitoring with continuous acquisition.
- Return Loss (RL): Ensures optical path reflection characteristics meet specification.
- Polarization Dependent Characteristics (PDC): Automated state-of-polarization (SOP) sweep and analysis.
- Waveguide Characterization: Waveguide propagation loss measurement and optical crosstalk diagnostics.
Optoelectronic (O-to-E) Conversion Characterization
Data Visualization and Analysis
- Wafer-Level Defect Mapping: Fully automated generation of whole-wafer Defect Maps to rapidly correlate process variation sources.
- Hyperspectral Inspection Technology: Integrated multi-modal data fusion for precise defect feature analysis.
2. Fully Automated Wafer-Level Positioning and Navigation
Integrating sub-micron motion control technology to fully automate the test workflow.
Wafer Compatibility
Supports 4-inch to 12-inch wafers, compatible with both III-V compound semiconductor and standard silicon photonics process lines.
Sub-Micron Automated Optical Coupling
- Supports both grating coupling (GC) and edge coupling (EC) configurations.
- First Light Intelligent Search: Automatically locates the initial coupling point and performs gradient-based alignment optimization.
- PZT Fine Positioning: Ensures optical power coupling repeatability better than 0.3 dB.
Wafer-Level Automation and Management
- Intelligent Wafer Mapping: Automated position training and test site calibration.
- High-Speed Die-to-Die Stepping: Z-axis displacement sensing ensures sub-micron alignment accuracy during inter-die travel.
- Opto-Electrical Co-Testing: Supports automated DC probe alignment and touch-down, enabling simultaneous O-to-O and O-to-E measurements.
3. Enhanced Reliability and High-Power Option (Optional Module)
An optional module designed for CPO high-power requirements, delivering industry-leading burn-in qualification capability.
Ultra-High-Power Stable Light Source
- Center Wavelength: 1310 ± 1 nm.
- Maximum Output Power: Up to 1.2 W (30.8 dBm), designed for accelerated aging and burn-in testing.
- Power Stability: Closed-loop power-feedback-lock ensures zero drift over extended test campaigns.
Full-Coverage Polarization Control (SOP Control)
- Control Range: Full PoincarƩ sphere coverage.
- Step Resolution: Azimuth ~0.25°; Ellipticity ~0.20°.
- Real-Time Monitoring: Integrated high-resolution power meter and polarization state analyzer with a measurement dynamic range of -60 dBm to +10 dBm.
4. System Environment and Thermal Control
- Wide-Temperature Test Range: Supports temperature-controlled measurements from -40°C to +125°C.
- Precision Measurement Protection: Shielded, frost-free enclosure design minimizes airflow-induced disturbance to fiber coupling stability.
- Intelligent Control Software: Integrated GUI supporting pre-programmed test site setup, automated calibration routines, and full data logging.
Applications
1. Wafer-Level KGD Screening and Yield Control
For CPO and heterogeneous integration processes, the system performs fully automated wafer-level functional testing prior to costly advanced packaging steps ā such as CoWoS and CPO integration ā to accurately identify Known Good Die (KGD). This prevents back-end packaging resources from being spent on non-conforming die, making it a core application for gross margin improvement and quick yield ramp-up.
2. High-Power Reliability Qualification and Accelerated Aging Testing (Optional)
To meet the demands of hyperscale data centers and AI high-performance computing, the system can be configured with a high-stability light source delivering up to 1.2 W (30.8 dBm) output ā purpose-built for PIC long-term stability validation and long-term reliability qualification. R&D and quality and reliability (Q&R) teams can use this capability for continuous 24/7 high-power accelerated aging tests, observing degradation mechanisms and defect signal intensity evolution under extreme optical power conditions.
3. Process Anomaly Localization via Hyperspectral Inspection Technology
Utilizing the system’s integrated intelligent analysis software, Hyperspectral Inspection Technology enables rapid and precise localization of anomalies across the wafer. This allows process engineers to efficiently identify process variations ā such as non-uniform etching or structural anomalies in grating couplers (GC) ā and directly correlate them to front-end epitaxial or lithography parameters for targeted process optimization.
4. Grating Coupler and Edge Coupling Technology Development (GC & EC)
For industry-standard vertical grating coupling (GC), the system provides sub-micron automated alignment and characteristic analysis. For engineers developing horizontal die-level edge coupling (EC), the system significantly reduces test setup time while ensuring high measurement repeatability across both coupling modalities.
Publications
Yi Yang, Bowei Xu, Jianhui Hou
First published: 15 November 2023 https://doi.org/10.1002/smll.202306668
⦠the devices were recorded on a source measurement unit, and the measurement was carried out under AM 1.5G illumination based on a class A+AA+ solar simulator (Enlitech SS-X50) ā¦
Reference toļ¼SS-X50
Fengxuan Chen , Xin Hu , Longhao Jisi , Liping Su, Huiyao Zhao , Yanbei Wei , Rui Zhou , Yangdi Chen , Jun Qu , Yonglian Xiong , Mao Liang , Wenfeng Zhang
Volume 38, March 2024, 108552 https://doi.org/10.1016/j.mtcomm.2024.108552
⦠(Enli Tech, SS-F5ā3A, Taiwan). The external quantum efficiency (EQE) spectra and integral current densities in the wavelength range of 300 ā¼ 850 nm were measured using an EQE ā¦Ā
Reference toļ¼SS-F5-3A
Naba Kumar Rana*, Dhruv Pratap Singh, and Nikhil Chander*
Publication Date:April 17, 2024 https://doi.org/10.1021/acsaelm.4c00182
⦠The photocurrentāvoltage (JāV) characteristics curve was measured using a Keithley 2450 source meter, an Enli-Technology Co, Ltd. (Model No-SS-F5ā3A, Taiwan) solar simulator ā¦
Reference toļ¼SS-F5-3AćModel No-SS-F5ā3A
Defect passivation with bromine template for efficient perovskite solar cells
Zhuowei Du, Zhu Ma, Qianyu Liu, Zhangfeng Huang, Tangjie Yu, Yanlin Li, Shanyue Hou, Yi Chen, Qiang Yang, Wei You, Junbo Yang, Guoming Li, Jingjing Xu, Hao Du, Yixian Li, Zichen Liu, Yuelong Huang, Jian Yu, Kuan Sun, Yaohua Mai, Rong Su
Volume 173, April 2024, 108138 https://doi.org/10.1016/j.mssp.2024.108138
⦠simulator (Enli Tech, SS-F5-3A, Taiwan) in glovebox. The active area of PSCs was 0.105 cm 2 . The maximum power point tracking (MPPT) stability test is continuously tested under the ā¦
Reference toļ¼SS-F5-3A
A Direct Chemical Approach to Mitigate Environment Lead Contamination in Perovskite Solar Cells
by Benjamin Liu, Zihan Jia and Zhiliang Chen *
Published: 28 March 2024 https://doi.org/10.3390/en17071629
⦠(100 mW/cm2), courtesy of the SS-F5-3A solar simulator from Enli Technology, Co., Ltd. (Taiwan, China). The measurement took place in ambient conditions and at room temperature. ā¦
Reference toļ¼SS-F5-3A
Naba Kumar Rana, Manas R. Samantaray, Dhruv Pratap Singh Nikhil Chander
Published: 08 January 2024 https://doi.org/10.1007/s00339-023-07243-3
⦠(AM 1.5G, 1000 W/m 2 ) using a solar simulator system (Enli-Technology Co. Ltd, Model No.-SS-F5-3A, Taiwan). The intensity of the light was calibrated using a standard reference ā¦
Reference toļ¼SS-F5-3AćModel No.-SS-F5-3A
Efficient micrometer-scale thick-film perovskite solar cells with superior stability
Jian-Fei Hu, Gang Chen, Shun-Zhang Yu, Yue-Xin Lin, Kai-Yu Wang, Zong-Wei Li, Guo-Dong Zhang, Teng-Fei Pan, Ya-Jing Li, Ming-Jie Li, Ying-Dong Xia, Yi-Fan Lv Yong-Hua Chen
Published: 29 December 2023 https://doi.org/10.1007/s12598-023-02529-0
⦠A Keithley 2400 source meter and an Enlitech SS-F5-3A solar simulator (Enli Tech,
Taiwan, China) were used to test the devices. NIST-certified monocrystalline Si solar cell (Newport ā¦
Reference toļ¼SS-F5-3A
Tapas Das, Arun Kumar, Sonia Rani, Asim Guchhait, Dhriti Sundar Ghosh
First published: 20 February 2024 https://doi.org/10.1002/adem.202302078
⦠5G (100 mW/cm2) intensity sunshine solar simulator was used to capture the JV curves (Enli-Technology Co, Ltd, Model No – SS-F5-3A, Taiwan). A reference silicon cell that meets ā¦
Reference toļ¼SS-F5-3AćModel No – SS-F5-3A
Introducing back-surface field for efficient inverted CsPbI3 perovskite solar cells
Chunyan Lu, Xiaodong Li, Haobo Yuan, Wenxiao Zhang, Xuemin Guo, Acan Liu, Hui Yang, Wen Li, Zhengbo Cui, YuYang Hu, Junfeng Fang
Volume 480, 15 January 2024, 147267 https://doi.org/10.1016/j.cej.2023.147267
⦠(Enlitech, SS-F5-3A) with simulated AM 1.5G illumination (100 mW cm ā2 ). The light source is a 450-W xenon lamp calibrated by a standard Si reference solar cell (Enli/SRC2020, SRC– ā¦
Reference toļ¼SS-F5-3AćSRC2020
Qiaojing Xu, Biao Shi, Yucheng Li, Jingjing Liu, Yuxiang Li, Zetong SunLi, Pengfei Liu, Yubo Zhang, Cong Sun, Wei Han, Qian Huang, Dekun Zhang, Huizhi Ren, Xiaona Du, Ying Zhao, Xiaodan Zhang
First published: 08 November 2023 https://doi.org/10.1002/adma.202308692
⦠source meter under AM 1.5G illumination with a xenon-lamp-based solar simulator (Enli. Tech., SSF5-3A). The light intensity was calibrated to 100 mW/cm2 by a standard silicon cell ā¦
Reference toļ¼SSF5-3A
Efficient inverted CsPbI3 perovskite solar cells fabricated in common air
Chunyan Lu , Xiaodong Li , Xuemin Guo , Sheng Fu , Wenxiao Zhang , Haobo Yuan , Junfeng Fang
Volume 452, Part 3, 15 January 2023, 139495 https://doi.org/10.1016/j.cej.2022.139495
⦠, SS-F5-3A) with simulated AM 1.5G illumination (100 mW cm ā2 ). The light source is a 450-W xenon lamp calibrated by a standard Si reference solar cell (Enli⦠(Enlitech, SS-F5-3A) with ā¦Ā
Reference toļ¼SS-F5-3A
RETRACTED: Interfacial passivation by Mono-ethanolamine in planar perovskite solar-cell
Naba Kumar Rana , Pijus Kanti Samanta
Volume 348, 1 October 2023, 134689 https://doi.org/10.1016/j.matlet.2023.134689
⦠5G (100 mW/cm2) intensity sunlight solar simulator (Enli-Technology Co, Ltd, Model No-SS-F5-3A, Taiwan). The intensity of the light was calibrated using a Contents lists available at ā¦
Reference toļ¼SS-F5-3AćModel No-SS-F5-3A
Yi-Nuo Yang, Xiao-Ming Li, Shi-Jie Wang, Xiao-Peng Duan, Yun-Hao Cai, Xiao-Bo Sun, Dong-Hui Wei, Wei Ma Yan-Ming Sun
Published: 20 October 2022 https://doi.org/10.1007/s10118-022-2860-8
⦠(Enli Technology Co., Ltd., SS-F5-3A). The representative current density-voltage (J-V) curves for optimized OSCs are illustrated in Fig. 2(a), and the corresponding photovoltaic ā¦
Reference toļ¼SS-F5-3A
Iodine-trapping strategy for light-heat stable inverted perovskite solar cells under ISOS protocols
Xiaodong Li, Hui Yang, Acan Liu, Chunyan Lu, Haobo Yuan, Wenxiao Zhang and Junfeng Fang
First published 07 Nov 2023 DOI https://doi.org/10.1039/D3EE03405D
⦠To calibrate the initial illumination intensity to 100 mW cm ā2 , the PSC is first measured under a solar simulator (Enlitech, SS-F5-3A) with simulated AM 1.5G illumination (450 W xenon ā¦
Reference toļ¼SS-F5-3A
Wenyan Zheng, Pengcheng Li, Chenhao Wang, Xvsheng Qiao, Guodong Qian, Xianping Fan
Volume 599, 1 January 2023, 121910 https://doi.org/10.1016/j.jnoncrysol.2022.121910
⦠The current density-voltage (JV) curves of OSCs were tested on Keithley 2400, under AM 1.5 G by an Enli SS-F5ā3A solar simulator whose light intensity was calibrated with a standard ā¦
Reference toļ¼SS-F5-3A
Seoungjun Ahn , Wei-Hao Chiu , Hsin-Ming Cheng , Vembu Suryanarayanan , Gao Chen , Yu-Ching Huang , Ming-Chung Wu , Kun-Mu Lee
Volume 120, September 2023, 106847 https://doi.org/10.1016/j.orgel.2023.106847
⦠The AM 1.5G solar simulator (SS-F5-3A, ENLI Technology Co. Ltd. ) was used as the irradiation light source for the current densityāvoltage (JāV) measurements. The illumination ā¦
Reference toļ¼SS-F5-3A
Kangrong Yan, Ziqiu Shen, Benfang Niu, Yanchun Huang, Di Wang, Emely Gu, Buyi Yan, Jizhong Yao, Hongzheng Chen Chang-Zhi Li
Published: 10 May 2023 https://doi.org/10.1007/s11426-023-1596-9
⦠from Enli Technology (Enlitech, SS-F5-3A), and the light intensity was calibrated with a certified standard photovoltaic reference cell (SRC2020, Enlitech). The JV measurements wereā¦
Reference toļ¼SS-F5-3AćSRC2020
Naba Kumar Rana, Arun Kumar, Nikhil Chander, and Dhriti Sundar Ghosh *
Publication Date:January 23, 2023 https://doi.org/10.1021/acsaelm.2c01552
⦠5G (100 mW/cm 2 ) intensity sunlight solar simulator (Enli-Technology Co, Ltd, Model No – SS-F5-3A, Taiwan). The intensity of the light was calibrated using a standard reference silicon ā¦
Reference toļ¼SS-F5-3AćModel No – SS-F5-3A
Tapas Das , Naba Kumar Rana and Asim Guchhait
Published 20 June 2023 https://doi.org/10.1088/1402-4896/acdc65
⦠5G (100 mW cm ā2 ) intensity Sunshine solar simulator was used to capture the JV curves (Enli-Technology Co, Ltd., Model No – SS-F5ā3A, Taiwan). A reference silicon cell that meets ā¦
Reference toļ¼SS-F5-3AćModel No – SS-F5ā3A
Gelation of hole transport layer to improve the stability of perovskite solar cells
Ying Zhang, Chenxiao Zhou, Lizhi Lin, Fengtao Pei, Mengqi Xiao, Xiaoyan Yang, Guizhou Yuan, Cheng Zhu, Yu Chen Qi Chen
Published: 10 July 2023 https://doi.org/10.1007/s40820-023-01145-y
⦠5G illumination at 1000 W m ā2 solar simulator (SS-F5-3A, Enlitech). The JV scan method was by reverse scanning from 1.2 to ā 0.2 V or forward scanning from ā 0.2 to 1.2 V at a ā¦
Reference toļ¼SS-F5-3A
Rui Liu, Yue Yu, Chang Liu, Hua Yang, Xiao-Lei Shi, Hua Yu Zhi-Gang Chen
Published: 09 October 2022 https://doi.org/10.1007/s11426-022-1349-6
⦠Simulated solar illumination was provided by an AAA Class Solar Simulator (Enli Tech, SS-F5-3A, Taiwan, China) with AM1.5G spectrum and light intensity of 100 mW cm ā¦Ā
Reference toļ¼SS-F5-3A
Intrinsically inert hyperbranched interlayer for enhanced stability of organic solar cells
Yawen Li, Tengfei Li, Jiayu Wang, Xiaowei Zhan, Yuze Lin
Volume 67, Issue 2, 30 January 2022, Pages 171-177 https://doi.org/10.1016/j.scib.2021.09.013
⦠The current densityāvoltage (JāV) characteristics were measured under AM 1.5G spectrum from a solar simulator (Enlitech model SS-F5-3A) and a Keithley 2450 source-measure unit. ā¦
Reference toļ¼SS-F5-3A
Small molecule interfacial cross-linker for highly efficient two-dimensional perovskite solar cells
Hongming Hou, Taotao Hu, Fu Zhang, Rui Liu, Jialong He, Chang Liu, Yue Yu, Dong Chen, Qiaofeng Wu, Meng Zhang, Hua Yu
Volume 68, May 2022, Pages 35-41 https://doi.org/10.1016/j.jechem.2021.10.026
⦠The photocurrent densityāvoltage (JV) curves of devices were acquired using a Keithley B2901A SourceMeter and AAA Class Solar Simulator (SS-F5-3A, Enli Technology Co., Ltd.), ā¦
Reference toļ¼SS-F5-3A
Heterogeneous lead iodide obtains perovskite solar cells with efficiency of 24.27%
Qianyu Liu, Zhu Ma, Yanlin Li, Guangyuan Yan, Dejun Huang, Shanyue Hou, Weiya Zhou, Xin Wang, Jie Ren, Yan Xiang, Rui Ding, Xuelin Yue, Zhuowei Du, Meng Zhang, Wenfeng Zhang, Lianfeng Duan, Yuelong Huang
Volume 448, 15 November 2022, 137676 https://doi.org/10.1016/j.cej.2022.137676
⦠The simulated sunlight was offered by the AAA solar simulator (SS-F5-3A, Enli Technology Co., Ltd.). With the AM1.5 G spectrum, the intensity of the solar simulator was calibrated to ā¦
Reference toļ¼SS-F5-3A
Manas R. Samantaray, Naba Kr. Rana, Arun Kumar, Dhriti S. Ghosh, Nikhil Chander
First published: 02 September 2021 https://doi.org/10.1002/er.7243
⦠The current density-voltage (J-V) curves of PSCs were recorded using a class AAA solar simulator (Enli-Technology Co. Ltd, Model No-SS-F5-3A, Taiwan ).
The devices were measured ā¦
Reference toļ¼SS-F5-3AćModel No-SS-F5-3A
Yu-Xuan Liu, Liang Wang, Ke Zhou, Hong-Bo Wu, Xiao-Bo Zhou, Zai-Fei Ma, Sheng-Wei Guo Wei Ma
Published: 21 June 2022 https://doi.org/10.1007/s10118-022-2759-4
⦠J-V characteristic was measured in the N2 glovebox under AM 1.5G (100 mWĀ·cmā2) using an AAA solar simulator (SSF5-3A, Enli Technology Co., Ltd.) calibrated with a standard ā¦
Reference toļ¼SS-F5-3A
Large-area Si solar cells based on molybdenum oxide hole selective contacts
Manas R. Samantaray, Tushar Chichkhede, Dhriti S. Ghosh Nikhil Chander
Published: 23 February 2022 https://doi.org/10.1007/s12633-022-01743-2
⦠class AAA solar simulator (Enli-Technology Co. Ltd., Model No- SS-F5-3A, Taiwan ) having aā¦
⦠using a quantum efficiency measurement system (Enli-Technology Co. Ltd. Model No-QE-R ā¦
Reference toļ¼SS-F5-3AćModel No- SS-F5-3AćModel No-QE-R
Ligand exchange engineering of FAPbI3 perovskite quantum dots for solar cells
Wentao Fan, Qiyuan Gao, Xinyi Mei, Donglin Jia, Jingxuan Chen, Junming Qiu, Qisen Zhou Xiaoliang Zhang
Published: 23 September 2022 https://doi.org/10.1007/s12200-022-00038-z
⦠5G, 100 mW/cm 2 ) provided by a solar simulator (Enli Technology Co., Ltd. SS-F5-3A ), the ā¦
⦠The external quantum efficiency (EQE) spectrum was measured using an Enli Technology ā¦
Reference toļ¼SS-F5-3A
α-Phase intermediate for efficient and stable narrow bandgap triple cation perovskite solar cells
Lin Du, Changtao Peng, Qian Chen, Yu Tang, Hui Su, Wenfeng Zhang, Haijin Li, Qiyun Wang, Yan Xiang, Liuwen Tian, Puan Lin, Shenghou Zhou, Yuelong Huang
Volume 910, 25 July 2022, 164722 https://doi.org/10.1016/j.jallcom.2022.164722
⦠(Enli Tech, SS-F5ā3A, Taiwan), which was calibrated by a standard silicon solar cell. The JV characteristics were recorded sweeping the voltage from forward bias to short circuit ā¦
Reference toļ¼SS-F5-3A
by Qiaofeng Wu , Taotao Hu, Chang Liu, Yue Yu, Hongming Hou, Rui Liu, Meng Zhang, and Hua Yu*
Publication Date:February 10, 2022 https://doi.org/10.1021/acs.jpcc.2c00283
⦠Illumination was provided by an AAA Class Simulator (SS-F5-3A, Enli Technology Co., Ltd.) under AM 1.5G spectrum and a light intensity of 100 mW/cm 2 . In addition, the light intensityā¦
Reference toļ¼SS-F5-3A
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