Nature: Silicon/2D-Material Photodetectors will Profoundly Change our Lives!

　　Two-dimensional materials (2DMs) are widely used to construct photodetectors (PDs) because of their flexible integration potential and ultra-wide operating wavelength range. Specifically, because silicon microelectronics and silicon photonics have been successfully developed for many applications, 2DM PD on silicon has attracted a lot of attention. 2DM PD meets the urgent needs of silicon photonics for low-cost, high-performance and broadband photoelectric detections. In this paper, the latest development of Si/2DM PD working in the near-infrared to mid-infrared bands is reviewed, especially in the window from the NIR band of 1.31/1.55 μm to the MIR band of 2-6 μm. Very attractive for silicon photonics, which is attractive for many applications, and has made great progress, including ~100 GHz high bandwidth MGM PD, ultra-high sensitivity PD based on the PG effect, and balanced bandwidth and sensitivity 2DM-heterostructure PD. Several representative wafer-level image sensors based on Si/2DM PD and arrays are also shown. However, achieving overall high-performance PD at the wafer level is still very challenging. For the full text, please refer to Nature magazine.