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Surface-illuminated Si2DM PDs with heterostructure configurations

Nature: Silicon/2D-Material Photodetectors will Profoundly Change our Lives!

  In June 2021, Nature published a review article: “Silicon/2D-material photodetectors: from near-infrared to mid-infrared” to discuss near-infrared to far-infrared silicon/two-dimensional material photodetectors. It may profoundly change our lives in the future~

  Two-dimensional materials (2DMs) are widely used to construct photodetectors (PDs) because of their flexible integration potential and ultra-wide operating wavelength range. Specifically, because silicon microelectronics and silicon photonics have been successfully developed for many applications, 2DM PD on silicon has attracted a lot of attention. 2DM PD meets the urgent needs of silicon photonics for low-cost, high-performance and broadband photoelectric detections. In this paper, the latest development of Si/2DM PD working in the near-infrared to mid-infrared bands is reviewed, especially in the window from the NIR band of 1.31/1.55 μm to the MIR band of 2-6 μm. Very attractive for silicon photonics, which is attractive for many applications, and has made great progress, including ~100 GHz high bandwidth MGM PD, ultra-high sensitivity PD based on the PG effect, and balanced bandwidth and sensitivity 2DM-heterostructure PD. Several representative wafer-level image sensors based on Si/2DM PD and arrays are also shown. However, achieving overall high-performance PD at the wafer level is still very challenging. For the full text, please refer to Nature magazine.

Summary of the working mechanisms of 2DM PDs

  Summary of the working mechanisms of 2DM PDs

Performance summary for the waveguide-integrated Si2DM PDs

  Performance summary for the waveguide-integrated Si/2DM PDs

Surface-illuminated Si2DM PDs with heterostructure configurations

  Surface-illuminated Si/2DM PDs with heterostructure configurations

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