Menu
Table of Contents
LSD4
Laser Scanning Defect Mapping System
In 4 Minutes, Grasp the Big Picture
Scan 100 mm * 100 mm with 50 µm Resolution in Under 4 Minutes
Scan 100 mm * 100 mm with 50 µm Resolution in Under 4 Minutes
The laser scanning defect imager is an upgraded version of the Laser Beam Induced Current (LBIC) test. It utilizes a laser beam with a wavelength energy greater than the semiconductor bandgap to irradiate the semiconductor, generating electron-hole pairs. By rapidly scanning the surface of the sample, it obtains an image distribution that reveals changes in internal current to analyze various defect distributions. This helps in analyzing the quality of sample preparation and aids in process improvement.
Features
Application
OPV Photoresponse Current Distribution Map
Non-uniformity analysis with a resolution of 50 µm
Busbar/Grid Aspect Ratio Detection (Cross-sectional Analysis)
High repeatability (6 repetitions)
Aging Analysis of Perovskite Cells
Aging Analysis - Zoom in on a specific area to analyze the causes of aging in detail
LBIC Photocurrent with aging time - LSD4 can comparatively analyze the QE decay characteristics of local and full-surface cell over time.
OPV photocurrent and QE at different wavelength
Specification
| Item | Parameter Description. |
|---|---|
| Function | a. Utilizing laser beams with wavelengths that have higher energy than the semiconductor bandgap to generate electron-hole pairs in the semiconductor, exploring the impact of the depletion region on internal current changes to understand and analyze various defect distributions as a direction for process improvement. b. Capable of scanning the distribution of photo-generated current on the surface of the sample. c. Capable of scanning the distribution of photo-voltage on the surface of the sample. d. Capable of scanning the distribution of open-circuit voltage and short-circuit current. e. Capable of analyzing surface contamination. f. Capable of analyzing the distribution of short-circuit regions. g. Capable of identifying and analyzing microcrack regions. h. Capable of analyzing the distribution of minority carrier diffusion length (optional). |
| Excitation source | 405 ±10nm Laser 520 ±10nm Laser 635 ±10nm Laser 830 ±10nm Laser |
| Scan area | ≧100mm x 100mm |
| Laser spot size | Close to TEM00 mode spot |
| Mapping resolution | a. Scanning resolution ≤ 50 µm b. Scanning resolution can be set by software |
| Mapping time | <4 mins (For 100 mm100 mm with 50 um resolution) |
| Dimension | 60 cm * 60 cm * 100 cm |
| Software | a. LBIC 3D visualization b. 2D cross-sectional analysis (electrode aspect ratio) c. Photo-current response distribution analysis (in conjunction with long-wavelength laser source) d. Data saving and export functions |
Our expert team is prepared to assess your application and offer tailored solution designs.
Our expert team is prepared to assess your application and offer tailored solution designs.
